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PSMN1R6-30MLHX

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See Product Specifications

Mouser No:

771-PSMN1R6-30MLHX

Mfr. No:

PSMN1R6-30MLHX

Mfr.:

Nexperia

Description:

MOSFETs The factory is currently not accepting orders for this product.

Datasheet:

PSMN1R6-30MLHX Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PSMN1R6-30MLHX

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-33-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	160 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	106 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Nexperia
Configuration:	Single
Fall Time:	24 ns
Product Type:	MOSFETs
Rise Time:	34 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	934660071115
Unit Weight:	100.200 mg

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The factory is currently not accepting orders for this product.

Filter Document:

Datasheet

PSMN1R6-30MLHX Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

PSMN N-Channel 30V MOSFETs

Nexperia PSMN N-Channel 30V MOSFETs feature NextPowerS3 technology that delivers low R_DSon and low I_DSS leakage in an LFPAK package. The LFPAK package provides high reliability and is qualified for 175°C. These MOSFETs include best-in-class Safe Operating Area (SOA). The PSMN MOSFETs have low leakage of less than 1μA at 25°C and are optimized for 4.5V gate drive. These MOSFETs feature -55°C to 175°C, both junction temperature and storage temperature. The Nexperia PSMN MOSFETs are ideal for hot-swap, power OR-ing, battery protection, brushed and BLDC motor control, and synchronous rectification in AC-DC and DC-DC applications.