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MASTERGAN5

Name: STMicroelectronics MASTERGAN5
Brand: STMicroelectronics
SKU: 511-MASTERGAN5
Price: 693.26 INR
Availability: InStock

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Mouser No:

511-MASTERGAN5

Mfr. No:

MASTERGAN5

Mfr.:

STMicroelectronics

Description:

Gate Drivers High power density 600 V half-bridge driver with two enhancement mode GaN power

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Datasheet:

MASTERGAN5 Datasheet (PDF)

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In Stock: 62

Stock:: 62 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 62 will be subject to minimum order requirements.

Long lead time reported on this product.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹693.26	₹693.26
	₹535.79	₹5,357.90
	₹495.72	₹12,393.00
	₹431.42	₹43,142.00
	₹418.38	₹2,09,190.00
	₹408.13	₹4,08,130.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	QFN-31
Number of Drivers:	2 Driver
Number of Outputs:	4 Output
Output Current:	4 A
Supply Voltage - Min:	3.3 V
Supply Voltage - Max:	15 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MASTERGAN
Packaging:	Tray
Brand:	STMicroelectronics
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Shutdown:	Shutdown
Factory Pack Quantity:	1560
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

MASTERGAN5 Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.