SCTW100N65G2AG

STMicroelectronics
511-SCTW100N65G2AG
SCTW100N65G2AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
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Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
17 Weeks Estimated factory production time.
Minimum: 600   Multiples: 600
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹2,737.63 ₹16,42,578.00
1,200 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-3
N-Channel
1 Channel
650 V
100 A
69 mOhms
- 10 V, + 22 V
5 V
162 nC
- 55 C
+ 200 C
420 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Packaging: Tube
Product Type: SiC MOSFETS
Series: SCTW100N65G2AG
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Unit Weight: 4.500 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Italy
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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