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STF18N60M6

Name: STMicroelectronics STF18N60M6
Brand: STMicroelectronics
SKU: 511-STF18N60M6
Price: 286.99 INR
Availability: InStock

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Mouser No:

511-STF18N60M6

Mfr. No:

STF18N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a TO-220FP packag

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Datasheet:

STF18N60M6 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STF18N60M6

In Stock: 158

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹286.99	₹286.99
	₹164.93	₹1,649.30
	₹128.59	₹12,859.00
	₹99.70	₹49,850.00
	₹91.60	₹91,600.00
	₹87.96	₹1,75,920.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	13 A
Rds On - Drain-Source Resistance:	280 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	16.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	STx18
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	2 g

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Datasheet

STF18N60M6 Datasheet (PDF)

PCN

Product Change Notification 2024-04-02 (PDF)

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.