080 42650011

Part of the TTI Family of Specialists Contact Mouser (Bangalore) 080 42650011 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STW50N65DM2AG

Name: STMicroelectronics STW50N65DM2AG
Brand: STMicroelectronics
SKU: 511-STW50N65DM2AG
Price: 731.46 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STW50N65DM2AG

Mfr. No:

STW50N65DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET i

Complete Your Design

Datasheet:

STW50N65DM2AG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STW50N65DM2AG

In Stock: 660

Stock:: 660 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹731.46	₹731.46
	₹422.11	₹4,221.10
	₹354.08	₹35,408.00
	₹333.58	₹2,00,148.00
	₹325.20	₹3,90,240.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	10.5 ns
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	STW50N65DM2AG
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	89 ns
Typical Turn-On Delay Time:	22.5 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STW50N65DM2AG Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low R_DS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.