TAS5622ADDV

Texas Instruments
595-TAS5622ADDV
TAS5622ADDV

Mfr.:

Description:
Audio Amplifiers 125W St/250W Mono HD Dig-In Pwr Stage A A 595-TAS5622ADDVR

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
18 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,206.68 ₹1,206.68
₹944.85 ₹9,448.50
₹879.62 ₹21,990.50
₹778.98 ₹81,792.90
₹759.42 ₹3,98,695.50
₹751.03 ₹7,62,295.45
2,520 Quote

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
₹1,015.66
Min:
1

Similar Product

Texas Instruments TAS5622ADDVR
Texas Instruments
Audio Amplifiers 125W St/250W Mono HD Dig-In Pwr Stage A A 595-TAS5622ADDV

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Audio Amplifiers
RoHS:  
Class-D
125 W
0.025 %
HTSSOP-44
- 40 C
+ 125 C
SMD/SMT
TAS5622A
Tube
Brand: Texas Instruments
Moisture Sensitive: Yes
Operating Supply Current: 20 mA
Product: Audio Amplifiers
Product Type: Audio Amplifiers
Factory Pack Quantity: 35
Subcategory: Audio ICs
Type: Mono, Stereo
Unit Weight: 6.300 g
Products found:
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Attributes selected: 0

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Compliance Codes
CNHTS:
8542319000
CAHTS:
8542330000
USHTS:
8542330001
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TAS5612LA / TAS5622A PurePath™ Class-D Power Amps

Texas Instruments TAS5612LA is a feature optimized 125W stereo / 250W mono class-D power amplifier based on the TI TAS5612LA. These amplifiers use large MOSFETs for improved power efficiency and a novel gate drive scheme for reduced losses in idle and at low output signals leading to reduced heat sink size. TAS5622A is a 125W stereo / 250W stereo thermally-enhanced version of the class-D power amplifier based on the TAS5612A using large MOSFETs for improved power efficiency and a novel gate drive scheme for reduced losses in idle and at low output signals leading to reduced heat sink size.