UCC27210DDA

Texas Instruments
595-UCC27210DDA
UCC27210DDA

Mfr.:

Description:
Gate Drivers 4A Peak Hi Freq High /Low-Side Driver A A 595-UCC27210DDAR

ECAD Model:
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In Stock: 137

Stock:
137 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 137 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹402.54 ₹402.54
₹303.77 ₹3,037.70
₹278.61 ₹6,965.25
₹250.65 ₹18,798.75
₹237.61 ₹71,283.00
₹236.68 ₹1,24,257.00
₹221.77 ₹2,32,858.50
₹217.11 ₹6,51,330.00

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
₹300.97
Min:
1

Similar Product

Texas Instruments UCC27210DDAR
Texas Instruments
Gate Drivers 4A Peak Hi Freq High /Low-Side Driver A A 595-UCC27210DDA

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SO-PowerPad-8
2 Driver
2 Output
4 A
8 V
17 V
7.2 ns
5.5 ns
- 40 C
+ 140 C
UCC27210
Tube
Brand: Texas Instruments
Product Type: Gate Drivers
Factory Pack Quantity: 75
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 70.600 mg
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Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.