Bench Talk

Texas Instruments Wide Bandgap Solutions

On May 16, 2022 in All, General, Power, Wide Bandgap by Texas Instruments

Wide bandgap (WBG) technologies, such as gallium nitride (GaN), play a crucial role in answering the demand for greater efficiency, performance, and reliability of high-voltage systems.

Tagged With: gallium nitride, gan, gan fets, gan power devices, texas instruments, ti, wbg, wide bandgap

How WBG Is a Step Toward Efficiency Being “1”

On May 9, 2022 in All, General, Industrial, Power, Wide Bandgap by Littelfuse

Wide Bandgap SiC MOSFETs from Littelfuse enable engineers to narrow down the gap between the current efficiency and the dream-value of “1” with a greater safety-margin to achieve their industrial power supply solutions.

New Tech Tuesdays: When Resiliency and Power is Needed, Call on Wide Bandgap

On June 1, 2021 in All, Automotive, General, New Tech Tuesdays by Tommy Cummings

Design engineers can employ WBG semiconductors in diverse applications, ranging from motor drives and power supplies to automotive and transportation systems, including hybrid and electric vehicles, aircraft, and ships.

Infineon Technologies CoolSiC™ Works in the Trenches

On May 12, 2021 in All, EIT 2021, Power, Wide Bandgap by Paul Golata

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. Infineon’s trench MOS technology is leading the way in power management.

Going Off-Grid Efficiently With MicroGrids

On August 24, 2020 in All, Automotive, Energy Harvesting, Industrial, Lighting by Paul Lee

Microgrids are becoming popular for environmental and dollar cost savings. However, adoption is dependent on efficient power conversion electronics enabled by the increasing use of wide bandgap semiconductors.

Tagged With: efficiency, electric vehicle, energy, ev, microgrid, renewables, saving, wide bandgap

Wide Bandgap Enhances Power Conversion

On March 25, 2020 in All, Power, Wide Bandgap by Paul Lee

Wide bandgap semiconductors are an enabling technology for a significant improvement in power-conversion efficiency, saving money, and helping to conserve energy in industrial, IT, and consumer applications.

Tagged With: gallium nitride, GaN, HEMT, MOSFET, SiC, silicon carbide, WBG, wide bandgap

Why SiC Devices Are Ideal for Level 3 EV Charging Applications

On September 24, 2019 in All, Power, Wide Bandgap by Robert Huntley

Charging an EV can be a lengthy process, however, Level 3 “fast” DC charging techniques promise much faster charging capabilities that reduce charging times to minutes instead of hours. This efficiency relies on high-speed power conversion, for which new wide-bandgap technologies are well suited.

SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs

On October 1, 2018 in All, Power, Wide Bandgap by Bill Schweber

Switching devices—both transistors and diodes—based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far better efficiency and range than today’s best silicon-only MOSFETs, IGBTs, and diodes, and are already in widespread use in top-tier data centers and server farms.

APEC 2014 – Download the Presentations Today

On May 30, 2014 in Power by Landa Culbertson

Nearly 4000 power professionals and knowledge-seekers converged at the Fort Worth Convention Center in March for the twenty-ninth annual IEEE Applied Power Electronics Conference and Exposition (APEC 2014). There was something for everyone it seemed, from hot topics such as high-density power supplies, wide bandgap semiconductors for power electronics applications, wireless charging for electric vehicles, advances in nanotechnology, energy harvesting and 3D packaging to standard subjects such as dc-dc converters, power factor correction, controls, and passive components.

Tagged With: APEC, Power, Wide Bandgap, Wireless Charging

GaN the Giant Killer?

On January 28, 2014 in Wide Bandgap by Barry Manz

Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been made of its inherent advantages, leading to projections that it will displace gallium arsenide and silicon LDMOS. However, for a variety of reasons GaN is more likely to complement its more entrenched rivals than displace them.

Tagged With: GaN, MOSFETS, RF Power, Silicon, Wide Bandgap

Bench Talk for Design Engineers | The Official Blog of Mouser Electronics

Search

Categories

Featured Authors

All Authors

Archives

Tags

Customer Service Office

Company

Resources

Support

Connect with Us