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Bench Talk for Design Engineers

Bench Talk

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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics


Infineon Technologies CoolSiC™ Works in the Trenches
On May 12, 2021 in All, EIT 2021, Power, Wide Bandgap by Paul Golata
Paul Golata
Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. Infineon’s trench MOS technology is leading the way in power management.
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629 Views
Tagged With: carbide, coolsic, diode, diodes, infineon technologies, mosfet, mosfets, oxide, power, power management, reliability, sic, silicon, silicon carbide, system, transistor, trench, wide bandgap
Wide Bandgap Enhances Power Conversion
On March 25, 2020 in All, Power, Wide Bandgap by Paul Lee
Paul Lee
Wide bandgap semiconductors are an enabling technology for a significant improvement in power-conversion efficiency, saving money, and helping to conserve energy in industrial, IT, and consumer applications.
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1470 Views
Tagged With: gallium nitride, GaN, HEMT, MOSFET, SiC, silicon carbide, WBG, wide bandgap
Why SiC Devices Are Ideal for Level 3 EV Charging Applications
On September 24, 2019 in All, Power, Wide Bandgap by Robert Huntley
Robert Huntley
Charging an EV can be a lengthy process, however, Level 3 “fast” DC charging techniques promise much faster charging capabilities that reduce charging times to minutes instead of hours. This efficiency relies on high-speed power conversion, for which new wide-bandgap technologies are well suited.
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4521 Views
Tagged With: Electric vehicle chargers, EV charging, High efficiency EV charging, J1227, Level 3 chargers, ON Semiconductor, SiC, Silicon carbide, WBG, Wide bandgap
Move Over LEDs, Electric Motors Will Save the Planet
On November 30, 2018 in All, Industrial, Motor Control, Power, Wide Bandgap by Steven Keeping
Steven Keeping
LEDs save energy, but efficient electric motors can save much more. Now a new generation of GaN transistors promises new power-supply breakthroughs to help the units become even greener.
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5267 Views
Tagged With: Electric motor driver design , Electric motors, GaN, High power-density electric motor, High-frequency inverters, Power supply design
SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs
On October 1, 2018 in All, Power, Wide Bandgap by Bill Schweber
Bill Schweber
Switching devices—both transistors and diodes—based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far better efficiency and range than today’s best silicon-only MOSFETs, IGBTs, and diodes, and are already in widespread use in top-tier data centers and server farms.
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3671 Views
Tagged With: Electric motors, Electric vehicles, EV, HEV, Hybrid electric vehicles, Power, Power-related circuits, SiC devices, SiC power, SiC technologies, SiC-based Diodes, SiC-based MOSFETs, Silicon-on-carbide devices, WBG, Wide Bandgap
Engineering for Space: Many Challenges, Various Solutions
On October 6, 2017 in All, Robotics, Wide Bandgap by Sylvie Barak
Sylvie Barak
High-performance, zero margin for error, extreme environments, and more are just some of the high-stakes challenges that space engineers face. New materials, louvres, space hardening, Whipple shielding, and artificial intelligence (AI) are just some of the ways space design challenges are addressed.
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8419 Views
Tagged With: Rosetta, AI, ESA, European Space Agency, fault tolerance, recycled rockets, silicon on insulator, silicon on sapphire, SOI, SOS, space industry design, Whipple shield, wide band gap
GaN the Giant Killer?
On January 28, 2014 in Wide Bandgap by Barry Manz
Barry Manz
Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been made of its inherent advantages, leading to projections that it will displace gallium arsenide and silicon LDMOS. However, for a variety of reasons GaN is more likely to complement its more entrenched rivals than displace them.
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17794 Views
Tagged With: GaN, MOSFETS, RF Power, Silicon, Wide Bandgap

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