STD65N160M9

STMicroelectronics
511-STD65N160M9
STD65N160M9

Mfr.:

Description:
MOSFETs N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET
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In Stock: 775

Stock:
775 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹304.56 ₹304.56
₹214.72 ₹2,147.20
₹150.93 ₹15,093.00
₹132.06 ₹66,030.00
Full Reel (Order in multiples of 2500)
₹106.91 ₹2,67,275.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
650 V
17 A
160 mOhms
- 30 V, 30 V
4.2 V
32 nC
- 55 C
+ 150 C
106 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Fall Time: 7 ns
Product Type: MOSFETs
Rise Time: 4 ns
Series: MDmesh M9
Factory Pack Quantity: 2500
Subcategory: Transistors
Unit Weight: 330 mg
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STD65N160M9 N-channel Power MOSFET

STMicroelectronics STD65N160M9 N-channel Power MOSFET is based on super-junction MDmesh M9 technology. The MOSFET is suitable for medium/high voltage featuring very low RDS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing for an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it particularly suitable for applications that require superior power density and outstanding efficiency.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

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