SCTW35N65G2VAG

Name: STMicroelectronics SCTW35N65G2VAG
Brand: STMicroelectronics
SKU: 511-SCTW35N65G2VAG
Price: 1114.43 INR
Availability: InStock

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See Product Specifications

Mouser No:

511-SCTW35N65G2VAG

Mfr. No:

SCTW35N65G2VAG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 2

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Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTW35N65G2VAG Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	240 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	STMicroelectronics
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Unit Weight:	4.500 g