CE3512K2

CEL
551-CE3512K2
CE3512K2

Mfr.:

Description:
RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C

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In Stock: 812

Stock:
812 Can Dispatch Immediately
Factory Lead Time:
2 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹194.05 ₹194.05
₹130.27 ₹1,302.70
₹106.91 ₹10,691.00
₹92.54 ₹46,270.00
₹89.84 ₹4,49,200.00
₹87.68 ₹8,76,800.00

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
₹150.03
Min:
1

Similar Product

CEL CE3512K2-C1
CEL
RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C

Product Attribute Attribute Value Select Attribute
CEL
Product Category: RF JFET Transistors
RoHS:  
pHEMT
GaAs
12 GHz
13.7 dB
4 V
- 3 V
10 mA
- 55 C
+ 125 C
125 mW
SMD/SMT
MICRO-X-4
Bulk
Brand: CEL
Configuration: Single
Forward Transconductance - Min: 54 mS
Gate-Source Cut-off Voltage: - 750 mV
NF - Noise Figure: 0.3 dB
Product Type: RF JFET Transistors
Factory Pack Quantity: 1
Subcategory: Transistors
Unit Weight: 16.473 mg
Products found:
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Attributes selected: 0

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

Low Noise FETs & ICs

CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.