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CMX90A705A6-R701

Name: CML Micro CMX90A705A6-R701
Brand: CML Micro
SKU: 226-CMX90A705A6-R701
Price: 6717.35 INR
Availability: InStock

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Mouser No:

226-CMX90A705A6-R701

Mfr. No:

CMX90A705A6-R701

Mfr.:

CML Micro

Description:

RF Amplifier 5.5W Ka-Band GaN Power Amplifier

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

CMX90A705A6-R701 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about CML Micro CMX90A705A6-R701

In Stock: 74

Stock:: 74 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹6,717.35	₹6,717.35
	₹6,023.16	₹1,50,579.00
Full Reel (Order in multiples of 100)
	₹5,343.87	₹5,34,387.00
500	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	CML Micro
Product Category:	RF Amplifier
RoHS:
Operating Frequency:	27.5 GHz to 31 GHz
Operating Supply Voltage:	27.5 V
Gain:	17 dB
Type:	Power Amplifiers
Mounting Style:	SMD/SMT
Package/Case:	AQFN-12
Technology:	GaN
OIP3 - Third Order Intercept:	42 dBm
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	CML Micro
Input Return Loss:	- 10 dB
Isolation dB:	- 43 dB
Moisture Sensitive:	Yes
Pd - Power Dissipation:	18.8 W
Product Type:	RF Amplifier
Factory Pack Quantity:	100
Subcategory:	Wireless & RF Integrated Circuits
Tradename:	SuRF

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Datasheet

CMX90A705A6-R701 Datasheet (PDF)

Compliance Codes

CAHTS:: 8542330000
USHTS:: 8542330001
TARIC:: 8542330000
MXHTS:: 8542330299
ECCN:: EAR99

Origin Classifications

Country of Origin:: United Kingdom
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

CMX90A705 5.5W Ka-Band GaN Power Amplifiers

CML Micro CMX90A705 5.5W Ka-Band GaN Power Amplifiers are compact two-stage amplifiers that deliver 37.4dBm (5.5W) of power with 16.5dB of gain. The CML Micro CMX90A705 amplifiers are suitable for driving and final stages in satellite communication terminals. The RF ports are matched to 50Ω, with integrated DC blocking capacitors at the input and output. The PCB includes decoupling capacitors for modulated signals like QPSK. The amplifier uses a 0.15µm gate length GaN-on-SiC process and is packaged in a small 4mm x 4mm air-cavity QFN for efficient thermal management.