EPC2302

Name: EPC EPC2302
Brand: EPC
SKU: 65-EPC2302
Price: 736.12 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

65-EPC2302

Mfr. No:

EPC2302

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN

Lifecycle:

New At Mouser

Datasheet:

EPC2302 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about EPC EPC2302

In Stock: 6,019

Stock:: 6,019 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹736.12	₹736.12
	₹508.76	₹5,087.60
	₹392.29	₹39,229.00
	₹368.99	₹3,68,990.00
Full Reel (Order in multiples of 3000)
	₹341.97	₹10,25,910.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	EPC
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	1.8 mOhms
Vgs - Gate-Source Voltage:	6 V, - 4 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	eGaN FET
Brand:	EPC
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	Power Transistor
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Unit Weight:	31.300 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

EPC2302 Datasheet (PDF)

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

EPC2302 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2302 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is engineered for high-frequency DC-DC applications to/from 40V to 60V and 48V BLDC motor drives. This eGaN^® FET features 1.8mΩ maximum drain-source on resistance R_DS(on) and 100V drain-source breakdown voltage (continuous) V_DS in a low inductance 3mm x 5mm QFN package. The package has side-wettable flanks and an exposed top for excellent thermal management. The thermal resistance to the case top is ~0.2°C/W, offering excellent thermal behavior and easy cooling. The EPC2302 enhancement-mode power transistor from EPC enables efficient operation in many topologies while improving efficiency and saving space.

EPC2302

Mfr.: EPC

Description: GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN

In Stock: 6,019

Pricing (INR)

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

EPC2302 Enhancement-Mode GaN Power Transistor

Customers Also Purchased

FEATURED PRODUCTS EPC

QuickView

An unexpected error has occurred.

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN

FEATURED PRODUCTS

EPC