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IX4351NE

Name: IXYS IX4351NE
Brand: IXYS Integrated Circuits
SKU: 747-IX4351NE
Price: 297.24 INR
Availability: InStock

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Mouser No:

747-IX4351NE

Mfr. No:

IX4351NE

Mfr.:

IXYS Integrated Circuits

Description:

Gate Drivers 9A GATE DRIVERS LOW SIDE SIC

Datasheet:

IX4351NE Datasheet (PDF)

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More Information

Learn more about IXYS Integrated Circuits IX4351NE

In Stock: 302

Stock:: 302 Can Dispatch Immediately

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Factory Lead Time:: 11 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹297.24	₹297.24
	₹225.50	₹2,255.00
	₹186.36	₹9,318.00
	₹173.31	₹17,331.00
	₹166.79	₹41,697.50
	₹163.07	₹81,535.00
	₹157.47	₹3,93,675.00
	₹153.75	₹7,68,750.00

Alternative Packaging

Mfr. Part No.:

IX4351NETR

Packaging:

Reel, Cut Tape

Availability:

In Stock

Price:

₹297.24

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	9 A
Supply Voltage - Min:	- 10 V
Supply Voltage - Max:	25 V
Rise Time:	10 ns
Fall Time:	10 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tube
Brand:	IXYS Integrated Circuits
Product Type:	Gate Drivers
Factory Pack Quantity:	50
Subcategory:	PMIC - Power Management ICs
Technology:	SiC

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Datasheet

IX4351NE Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
TARIC:: 8542399000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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IX4351NE 9A Low Side SiC MOSFET & IGBT Drivers

IXYS IX4351NE Low Side SiC MOSFET and IGBT Drivers have separate 9A source and sink outputs, allowing for custom turn-on and turn-off timing while minimizing switching losses. The IX4351NE offers an internal negative charge regulator that provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.