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IXFN210N20P

Name: IXYS IXFN210N20P
Brand: IXYS
SKU: 747-IXFN210N20P
Price: 5637.39 INR
Availability: InStock

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Mouser No:

747-IXFN210N20P

Mfr. No:

IXFN210N20P

Mfr.:

IXYS

Description:

MOSFET Modules 188 Amps 200V 0.0105 Rds

Datasheet:

IXFN210N20P Datasheet

ECAD Model:

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In Stock: 1,168

Stock:: 1,168 Can Dispatch Immediately

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹5,637.39	₹5,637.39
	₹4,790.38	₹47,903.80
	₹4,022.58	₹4,02,258.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	188 A
Rds On - Drain-Source Resistance:	10.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.07 kW
Series:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Product Type:	MOSFET Modules
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	HiperFET
Unit Weight:	30 g

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Datasheet

IXFN210N20P Datasheet

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Compliance Codes

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.