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IXFN230N20T

Name: IXYS IXFN230N20T
Brand: IXYS
SKU: 747-IXFN230N20T
Price: 4406.48 INR
Availability: OutOfStock

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Mouser No:

747-IXFN230N20T

Mfr. No:

IXFN230N20T

Mfr.:

IXYS

Description:

MOSFET Modules 230A 200V

Datasheet:

IXFN230N20T Datasheet

ECAD Model:

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Learn more about IXYS IXFN230N20T

Availability

Stock:: 0

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On Order:: 368

Expected 04-08-2026
Factory Lead Time:: 23

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹4,406.48	₹4,406.48
	₹3,743.97	₹37,439.70
	₹3,143.89	₹3,14,389.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	220 A
Rds On - Drain-Source Resistance:	7.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.09 mW
Series:	IXFN230N20
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	17 ns
Height:	12.22 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	38 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	GigaMOS Power MOSFET
Typical Turn-Off Delay Time:	62 ns
Typical Turn-On Delay Time:	58 ns
Width:	25.42 mm
Unit Weight:	30 g

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Datasheet

IXFN230N20T Datasheet

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Compliance Codes

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.