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IXFN360N10T

Name: IXYS IXFN360N10T
Brand: IXYS
SKU: 747-IXFN360N10T
Price: 3230.55 INR
Availability: InStock

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See Product Specifications

Mouser No:

747-IXFN360N10T

Mfr. No:

IXFN360N10T

Mfr.:

IXYS

Description:

MOSFET Modules 360 Amps 100V

Datasheet:

IXFN360N10T Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFN360N10T

In Stock: 281

Stock:: 281

Can Dispatch Immediately

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On Order:: 20

Expected 04-06-2026

1,560

980

Expected 03-08-2026

580

Expected 17-08-2026
Factory Lead Time:: 34

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹3,230.55	₹3,230.55
	₹2,263.34	₹22,633.40
	₹2,174.82	₹2,17,482.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	360 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	830 W
Series:	IXFN360N10
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	160 ns
Product Type:	MOSFET Modules
Rise Time:	100 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	Power MOSFET
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	47 ns
Unit Weight:	30 g

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Datasheet

IXFN360N10T Datasheet

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Compliance Codes

CNHTS:: 8504901900
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.