IXFN82N60Q3

IXYS
747-IXFN82N60Q3
IXFN82N60Q3

Mfr.:

Description:
MOSFET Modules Q3Class HiPerFET Pwr MOSFET 600V/66A

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about IXYS IXFN82N60Q3

In Stock: 244

Stock:
244 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 244 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹7,421.79 ₹7,421.79
₹6,447.12 ₹64,471.20
₹5,396.05 ₹5,39,605.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
600 V
66 A
75 mOhms
- 30 V, + 30 V
960 W
IXFN82N60
Tube
Brand: IXYS
Configuration: Single
Product Type: MOSFET Modules
Rise Time: 300 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Unit Weight: 30 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8541290000
TARIC:
8541900000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541900299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Qrr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.