IXFX220N17T2

IXYS
747-IXFX220N17T2
IXFX220N17T2

Mfr.:

Description:
MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
33 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 30
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,113.50 ₹3,34,050.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
170 V
220 A
6.3 mOhms
- 20 V, 20 V
2.5 V
500 nC
- 55 C
+ 175 C
1.25 mW
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Fall Time: 150 ns
Forward Transconductance - Min: 105 S
Product Type: MOSFETs
Rise Time: 160 ns
Series: IXFX220N17
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 44 ns
Unit Weight: 6 g
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Datasheet

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Compliance Codes
CNHTS:
8541210000
CAHTS:
8541900000
USHTS:
8541290065
JPHTS:
8542900006
TARIC:
8541900000
MXHTS:
8541900299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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