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IXTH450P2

Name: IXYS IXTH450P2
Brand: IXYS
SKU: 747-IXTH450P2
Price: 852.6 INR
Availability: InStock

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Mouser No:

747-IXTH450P2

Mfr. No:

IXTH450P2

Mfr.:

IXYS

Description:

MOSFETs PolarP2 Power MOSFET

Datasheet:

IXTH450P2 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXTH450P2

In Stock: 327

Stock:: 327

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On Order:: 90

Expected 07-12-2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹852.60	₹852.60
	₹582.38	₹5,823.80
	₹479.88	₹57,585.60
510	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	16 A
Rds On - Drain-Source Resistance:	330 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	Polar2 HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Product Type:	MOSFETs
Series:	IXTH450
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	6 g

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Datasheet

IXTH450P2 Datasheet

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Polar2™ HiPerFET™ MOSFETs

IXYS Polar2™ HiPerFET™ MOSFETs are offered with drain current ratings of 24, 42, 52, 74, 94, and 120 Amperes. These high-performance devices retain all the features and advantages of the PolarP2 Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (t_rr <=250ns).