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RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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DF200R12KE3

Name: Infineon DF200R12KE3
Brand: Infineon Technologies
SKU: 641-DF200R12KE3
Price: 9652.41 INR
Availability: InStock

Mouser No:

641-DF200R12KE3

Mfr. No:

DF200R12KE3

Mfr.:

Infineon Technologies

Datasheet:

ECAD Model:

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Stock:: 52 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Qty.	Unit Price	Ext. Price
	₹9,652.41	₹9,652.41
	₹8,090.99	₹80,909.90

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Silicon Modules
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Continuous Collector Current at 25 C:	200 A
Gate-Emitter Leakage Current:	400 nA
Pd - Power Dissipation:	1.04 kW
Package/Case:	IS5a ( 62 mm )-5
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tray
Brand:	Infineon Technologies
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Series:	IGBT3 - E3
Factory Pack Quantity:	10
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	SP000100741 DF200R12KE3HOSA1
Unit Weight:	340 g