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IGT65R025D2ATMA1

Name: Infineon IGT65R025D2ATMA1
Brand: Infineon Technologies
SKU: 726-IGT65R025D2ATMA1
Price: 1218.79 INR
Availability: InStock

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Mouser No:

726-IGT65R025D2ATMA1

Mfr. No:

IGT65R025D2ATMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs CoolGaN Transistor 650 V G5

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGT65R025D2ATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IGT65R025D2ATMA1

In Stock: 257

Stock:: 257

Can Dispatch Immediately

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On Order:: 2,000

Expected 11-06-2026

4,000

2,000

Expected 12-06-2026

2,000

Expected 16-07-2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹1,218.79	₹1,218.79
	₹835.82	₹8,358.20
	₹718.42	₹71,842.00
	₹661.58	₹3,30,790.00
	₹604.74	₹6,04,740.00
Full Reel (Order in multiples of 2000)
	₹539.51	₹10,79,020.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-HSOF-8
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	236 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	Transistors
Product Type:	GaN FETs
Rise Time:	12 ns
Series:	650V G5
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	CoolGaN Transistor
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	11 ns
Part # Aliases:	IGT65R025D2 SP006026239

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Datasheet

IGT65R025D2ATMA1 Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.