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IPZA65R035CFD7AXKSA1

Name: Infineon IPZA65R035CFD7AXKSA1
Brand: Infineon Technologies
SKU: 726-IPZA65R035CFD7AX
Price: 1245.82 INR
Availability: OutOfStock

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Mouser No:

726-IPZA65R035CFD7AX

Mfr. No:

IPZA65R035CFD7AXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_COOLMOS

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IPZA65R035CFD7AXKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPZA65R035CFD7AXKSA1

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 19 Weeks Estimated factory production time.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,245.82	₹1,245.82
	₹751.03	₹7,510.30
	₹655.99	₹65,599.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	63 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	145 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	305 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	2.7 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	9.2 ns
Factory Pack Quantity:	240
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	131 ns
Typical Turn-On Delay Time:	30 ns
Part # Aliases:	IPZA65R035CFD7A -

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Datasheet

IPZA65R035CFD7AXKSA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.

650V CoolMOS™ CFD7 SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7 SJ Power MOSFETs are ultra-fast diodes that extend the voltage class offering of the CFD7 family. The power MOSFETs have an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior. These CFD7 power MOSFETs offer the highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). The MOSFETs blend all the advantages of a fast-switching technology with superior hard computation robustness. These power MOSFETs support CoolMOS™ CFD7 technology that meets reliability standards and supports high power density solutions.