LSIC2SD120N80PA

Littelfuse
576-LSIC2SD120N80PA
LSIC2SD120N80PA

Mfr.:

Description:
SiC Schottky Diodes RECT 1.2KV 80A SM SCHOTTKY

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
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Learn more about Littelfuse LSIC2SD120N80PA

In Stock: 2

Stock:
2 Can Dispatch Immediately
Quantities greater than 2 will be subject to minimum order requirements.
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Unit Price:
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Ext. Price:
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Pricing (INR)

Qty. Unit Price
Ext. Price
₹2,977.10 ₹2,977.10
₹2,348.14 ₹23,481.40
₹2,333.23 ₹2,33,323.00
₹2,233.52 ₹11,16,760.00
1,000 Quote

Product Attribute Attribute Value Select Attribute
Littelfuse
Product Category: SiC Schottky Diodes
RoHS:  
Screw Mount
SOT-227B
Dual Series
80 A
1.2 kV
1.8 V
300 A
100 uA
- 55 C
+ 175 C
LSIC2SD
Tube
Brand: Littelfuse
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 100
Subcategory: Diodes & Rectifiers
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

LSIC2SD GEN2 SiC Schottky Diodes

Littelfuse LSIC2SD GEN2 Silicon Carbide (SiC) Schottky Diodes provide improved efficiency, reliability, and thermal management in various applications. The diodes have an operating junction temperature of +175°C maximum. The positive temperature coefficient of the diodes supports safe operation and ease of paralleling. Other features of the Littelfuse LSIC2SD GEN2 SiC Schottky Diodes include high-surge capability and negligible reverse recovery current. The switching behavior of the diodes is extremely fast and temperature-independent. Compared to Si bipolar diodes, these diodes provide dramatically reduced switching losses. LSIC2SD GEN2 SiC Schottky Diodes are ideal for EV charging stations, solar inverters, switch-mode power supplies, and more. These diodes are available in a variety of packages and voltage/current ratings, including 650V (6A to 40A) and 1200V (5A to 40A).

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