CGH09120F

Name: MACOM CGH09120F
Brand: MACOM
SKU: 941-CGH09120F
Price: 59676.2 INR
Availability: InStock

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Mouser No:

941-CGH09120F

Mfr. No:

CGH09120F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT UHF-2.5GHz, 120 Watt

Datasheet:

CGH09120F Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 7

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹59,676.20	₹59,676.20
	₹53,131.24	₹5,31,312.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	28 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	56 W
Brand:	MACOM
Configuration:	Single
Gain:	21 dB
Maximum Drain Gate Voltage:	28 V
Maximum Operating Frequency:	2.5 GHz
Minimum Operating Frequency:	300 MHz
Output Power:	20 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	20
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V

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Datasheet

CGH09120F Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

CGH09120F GaN High Electron Mobility Transistor

MACOM CGH09120F GaN High Electron Mobility Transistor (HEMT) is designed for high efficiency, high gain, and wide bandwidth capabilities. This module allows for a high degree of DPD correction to be applied, making it ideal for MC-GSM, WCDMA, and LTE amplifier applications. This MACOM transistor is housed in a ceramic/metal flange package.