GTRA364002FC-V1-R0

Name: MACOM GTRA364002FC-V1-R0
Brand: MACOM
SKU: 941-GTRA364002FCV1R0
Price: 26427.71 INR
Availability: InStock

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Mouser No:

941-GTRA364002FCV1R0

Mfr. No:

GTRA364002FC-V1-R0

Mfr.:

MACOM

Description:

GaN FETs 400W GaN HEMT 48V 3400 to 3600MHz

Datasheet:

GTRA364002FC-V1-R0 Datasheet (PDF)

ECAD Model:

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More Information

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Shipping Alert:

This product may require additional documentation to export from the United States.

In Stock: 40

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Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹26,427.71	₹26,427.71
	₹21,789.21	₹2,17,892.10
Full Reel (Order in multiples of 50)
	₹21,789.21	₹10,89,460.50
100	Quote

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	Screw Mount
Package/Case:	H-37248C-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	125 V
Id - Continuous Drain Current:	8.1 A
Maximum Operating Temperature:	+ 225 C
Brand:	MACOM
Gain:	13 dB
Maximum Operating Frequency:	3.6 GHz
Minimum Operating Frequency:	3.4 GHz
Output Power:	400 W
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V

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Datasheet

GTRA364002FC-V1-R0 Datasheet (PDF)

PCN

Product Change Notification 2024-04-25 (PDF)

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Compliance Codes

USHTS:: 8541290055
ECCN:: 3A001.b.3.a

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications.