PXAE263708NB-V1-R2

MACOM
941-PXAE263708NBV1R2
PXAE263708NB-V1-R2

Mfr.:

Description:
RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz

Datasheet:
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Learn more about MACOM PXAE263708NB-V1-R2

In Stock: 90

Stock:
90 Can Dispatch Immediately
Quantities greater than 90 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹10,993.38 ₹10,993.38
₹9,144.69 ₹91,446.90
₹8,452.36 ₹8,45,236.00
Full Reel (Order in multiples of 250)
₹8,452.36 ₹21,13,090.00
500 Quote
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
65 V
80 mOhms
2.62 GHz to 2.69 GHz
13.5 dB
400 W
+ 225 C
Screw Mount
HB2SOF-8-1
Reel
Cut Tape
MouseReel
Brand: MACOM
Number of Channels: 1 Channel
Product Type: RF MOSFET Transistors
Factory Pack Quantity: 250
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 6 V to + 10 V
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Attributes selected: 0

Datasheet

PCN

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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications. 

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