MMDT5551-TP

Micro Commercial Components (MCC)
833-MMDT5551-TP
MMDT5551-TP

Mfr.:

Description:
Bipolar Transistors - BJT 200mA 160V

ECAD Model:
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In Stock: 5,780

Stock:
5,780 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹39.53 ₹39.53
₹24.62 ₹246.20
₹15.45 ₹1,545.00
₹11.14 ₹5,570.00
₹8.80 ₹8,800.00
Full Reel (Order in multiples of 3000)
₹7.55 ₹22,650.00
₹6.38 ₹38,280.00
₹5.39 ₹48,510.00
₹5.21 ₹1,25,040.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Micro Commercial Components (MCC)
Product Category: Bipolar Transistors - BJT
RoHS:  
MMDT5551
Brand: Micro Commercial Components (MCC)
Collector- Base Voltage VCBO: 180 V
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 150 mV
Configuration: Dual
DC Collector/Base Gain hFE Min: 80
Emitter- Base Voltage VEBO: 6 V
Gain Bandwidth Product fT: 300 MHz
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Mounting Style: SMD/SMT
Package/Case: SOT-363-6
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Pd - Power Dissipation: 200 mW
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Unit Weight: 9 mg
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Attributes selected: 0

CNHTS:
8541210000
CAHTS:
8541100090
USHTS:
8541210075
JPHTS:
8541210101
KRHTS:
8541219000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

MMDT5551HE3 Dual NPN Transistor

Micro Commercial Components (MCC) MMDT5551HE3 Dual NPN Transistor is an AEC-Q101 qualified small-signal Bipolar Junction Transistor (BJT) with a 600mA collector current. This BJT features a 180V collector-base voltage, 160V collector-emitter voltage, 6V emitter-base voltage, 200mA collector power dissipation and comes in a SOT-363 package. The MMDT5551HE3 transistor also features a 6pF maximum output capacitance, 300MHz maximum transition frequency, and a -55°C to 150°C operating junction temperature range. This BJT adheres to Moisture Sensitivity Level 1 (MSL 1), and the epoxy meets the UL 94V-0 flammability rating. The MMDT5551HE3 transistor is lead-free, halogen-free, and RoHS-compliant.