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APTMC120HM17CT3AG

Mouser No:

494-APTMC120HM17CT3A

Mfr. No:

APTMC120HM17CT3AG

Mfr.:

Microchip Technology

Description:

MOSFET Modules CC3186

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Lifecycle:

Obsolete

Datasheet:

APTMC120HM17CT3AG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	MOSFET Modules
Delivery Restrictions:	Mouser does not presently sell this product in your region.
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SP3F-32
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	147 A
Rds On - Drain-Source Resistance:	12.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	750 W
Packaging:	Tube
Brand:	Microchip Technology
Configuration:	Quad
Fall Time:	30 ns
Product Type:	MOSFET Modules
Rise Time:	19 ns
Factory Pack Quantity:	1
Subcategory:	Discrete and Power Modules
Type:	Switch Mode Power Supply
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	21 ns
Vf - Forward Voltage:	1.5 V
Unit Weight:	110 g

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Datasheet

APTMC120HM17CT3AG Datasheet (PDF)

DTS

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Compliance Codes

USHTS:: 8541590080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.