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MSC017SMA120S

Name: Microchip MSC017SMA120S
Brand: Microchip Technology
SKU: 579-MSC017SMA120S
Price: 4438.16 INR
Availability: InStock

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Mouser No:

579-MSC017SMA120S

Mfr. No:

MSC017SMA120S

Mfr.:

Microchip Technology

Description:

MOSFET Modules MOSFET SIC 1200 V 17 mOhm TO-268

Datasheet:

MSC017SMA120S Datasheet (PDF)

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Learn more about Microchip Technology MSC017SMA120S

In Stock: 160

Stock:: 160 Can Dispatch Immediately

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹4,438.16	₹4,438.16
	₹4,054.26	₹40,542.60
	₹3,561.34	₹1,06,840.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	TO-268-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	17.6 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	357 W
Packaging:	Tube
Brand:	Microchip Technology
Configuration:	Single
Fall Time:	21 ns
Product Type:	MOSFET Modules
Rise Time:	16 ns
Factory Pack Quantity:	30
Subcategory:	Discrete and Power Modules
Typical Turn-Off Delay Time:	49 ns
Typical Turn-On Delay Time:	52 ns

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Datasheet

MSC017SMA120S Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MSC017SMA120x Silicon Carbide N-Ch Power MOSFETs

Microchip Technology MSC017SMA120x Silicon Carbide N-Ch Power MOSFETs increase the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost in high-voltage applications. The Microchip MSC017SMA120x SiC MOSFETs provide high efficiency to enable a lighter, more compact system with improved thermal capabilities and lower switching losses.