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MSC035SMA170B4

Name: Microchip MSC035SMA170B4
Brand: Microchip Technology
SKU: 579-MSC035SMA170B4
Price: 3894.92 INR
Availability: InStock

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Mouser No:

579-MSC035SMA170B4

Mfr. No:

MSC035SMA170B4

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247-4

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Datasheet:

MSC035SMA170B4 Datasheet (PDF)

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Learn more about Microchip Technology MSC035SMA170B4

In Stock: 1

Stock:: 1

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On Order:: 510

Expected 12-10-2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹3,894.92	₹3,894.92

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	68 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	178 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	370 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Fall Time:	17 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	7 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	7 ns

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Datasheet

MSC035SMA170B4 Datasheet (PDF)

DTS

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.