MT41K256M8DA-125 IT:K

340-135811-TRAY
MT41K256M8DA-125 IT:K

Mfr.:

Description:
DRAM DDR3 2Gbit 8 78/117FBGA 1 IT

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
ECAD Model:
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In Stock: 1,157

Stock:
1,157 Can Dispatch Immediately
Factory Lead Time:
53 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1157 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1   Maximum: 100
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,905.53 ₹1,905.53

Product Attribute Attribute Value Select Attribute
Micron Technology
Product Category: DRAM
RoHS:  
SDRAM - DDR3
2 Gbit
8 bit
800 MHz
FBGA-78
256 M x 8
13.75 ns
1.283 V
1.45 V
- 40 C
+ 95 C
MT41K
Tray
Brand: Micron
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 1440
Subcategory: Memory & Data Storage
Supply Current - Max: 56 mA
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Attributes selected: 0

                        
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Compliance Codes
CNHTS:
8542329000
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MT41x DDR3 SDRAMs

Alliance Memory MT41x DDR3 SDRAMs use double data rate architecture with an interface to transfer two data words per clock cycle at I/O pins. The MT41x DDR3's double data rate architecture is an 8n-prefetch architecture that helps to achieve high-speed operations. These SDRAMs operate from CK and CK# differential clock inputs. The MT41x DDR3 employs a burst-orientated approach to read and write with access starting at the selected location and continuing in a programmed sequence. These SDRAMs use READ and WRITE BL8 and BC4. The MT41x DDR3 SRAMs can operate concurrently due to their pipelined and multibank architecture. This helps in providing high bandwidth by hiding row precharge and activation time. These SDRAMs feature self-refresh mode, power-saving mode, and power-down mode.