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QPD1028

Name: Qorvo QPD1028
Brand: Qorvo
SKU: 772-QPD1028
Price: 179487.04 INR
Availability: InStock

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Mouser No:

772-QPD1028

Mfr. No:

QPD1028

Mfr.:

Qorvo

Description:

GaN FETs 750W, 65V, Pre-matched, 1.2-1.4GHz, Earl

ECAD Model:

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Shipping Alert:

This item may require additional fees and documentation. Customs delays may also occur.

In Stock: 11

Stock:: 11 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,79,487.04	₹1,79,487.04

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
Delivery Restrictions:	This item may require additional fees and documentation. Customs delays may also occur.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	NI-780
Vds - Drain-Source Breakdown Voltage:	65 V
Id - Continuous Drain Current:	19 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	400 W
Brand:	Qorvo
Gain:	19.8 dB
Moisture Sensitive:	Yes
Output Power:	750 W
Packaging:	Waffle
Product Type:	GaN FETs
Series:	QPD1028
Factory Pack Quantity:	18
Subcategory:	Transistors
Technology:	GaN SiC
Transistor Type:	HEMT

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Compliance Codes

USHTS:: 8541497080
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD1028 & QPD1028L 750W GaN on SiC Transistors

Qorvo QPD1028 and QPD1028L 750W GaN on SiC Transistors are discrete Gallium Nitride on Silicon Carbide HEMT (High-Electron-Mobility Transistors) operating from 1.2GHz to 1.4GHz. These devices provide 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. The QPD1028 and QPD1028L Transistors are internally pre-matched for optimal performance can support both continuous wave and pulsed operations.