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TP65H480G4JSG-TR

Name: Renesas Electronics TP65H480G4JSG-TR
Brand: Renesas Electronics
SKU: 227-TP65H480G4JSG-TR
Price: 182.38 INR
Availability: InStock

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Mouser No:

227-TP65H480G4JSG-TR

Mfr. No:

TP65H480G4JSG-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN

Datasheet:

TP65H480G4JSG-TR Datasheet (PDF)

ECAD Model:

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Learn more about Renesas Electronics TP65H480G4JSG-TR

In Stock: 1,685

Stock:: 1,685 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 4000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹182.38	₹182.38
	₹116.79	₹1,167.90
	₹78.97	₹7,897.00
	₹77.08	₹38,540.00
	₹72.95	₹72,950.00
	₹59.11	₹1,18,220.00
Full Reel (Order in multiples of 4000)
	₹49.41	₹1,97,640.00
	₹48.24	₹3,85,920.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PQFN-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	3.6 A
Rds On - Drain-Source Resistance:	560 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	13.2 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Series:	Gen IV SuperGaN
Factory Pack Quantity:	4000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	TP65H480G4JSG

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Datasheet

TP65H480G4JSG-TR Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.