MASTERGAN4

STMicroelectronics
511-MASTERGAN4
MASTERGAN4

Mfr.:

Description:
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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In Stock: 115

Stock:
115 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 115 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,022.38 ₹1,022.38
₹787.00 ₹7,870.00
₹735.79 ₹18,394.75
₹667.51 ₹66,751.00
₹636.97 ₹1,59,242.50
₹611.81 ₹3,05,905.00
₹565.09 ₹5,65,090.00
2,500 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
QFN-31
2 Driver
3 Output
6.5 A
3.3 V
15 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Features: 600 V System-in-Package Integrating Half-Bridge Gate Driver
Input Voltage - Max: 15 V
Input Voltage - Min: 3.3 V
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 225 mOhms
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 150 mg
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Attributes selected: 0

Datasheet

PCN

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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