MASTERGAN6TR

STMicroelectronics
511-MASTERGAN6TR
MASTERGAN6TR

Mfr.:

Description:
Gate Drivers 650 V enhancement mode GaN High power density half-bridge with high voltage driver
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about STMicroelectronics MASTERGAN6TR

In Stock: 322

Stock:
322 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 25
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹800.42 ₹800.42
₹620.58 ₹6,205.80
₹575.85 ₹14,396.25
Full Reel (Order in multiples of 3000)
₹575.85 ₹17,27,550.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Driver
Half-Bridge
SMD/SMT
QFN-35
1 Output
9 V
18 V
4 ns
4 ns
- 40 C
+ 125 C
MASTERGAN6
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Development Kit: EVLMG6
Maximum Turn-Off Delay Time: 70 ns
Maximum Turn-On Delay Time: 70 ns
Moisture Sensitive: Yes
Off Time - Max: 70 ns
Pd - Power Dissipation: 20 mW
Product Type: Gate Drivers
Propagation Delay - Max: 105 ns
Rds On - Drain-Source Resistance: 140 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 194 mg
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Attributes selected: 0

Datasheet

Compliance Codes
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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