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SCT020H120G3AG

Name: STMicroelectronics SCT020H120G3AG
Brand: STMicroelectronics
SKU: 511-SCT020H120G3AG
Price: 1718.24 INR
Availability: OutOfStock

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Mouser No:

511-SCT020H120G3AG

Mfr. No:

SCT020H120G3AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT020H120G3AG Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 21 Weeks Estimated factory production time.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,718.24	₹1,718.24
	₹1,376.27	₹13,762.70
	₹1,189.91	₹1,18,991.00
	₹1,188.98	₹5,94,490.00
Full Reel (Order in multiples of 1000)
	₹1,052.00	₹10,52,000.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Qualification:	AEC-Q100
Brand:	STMicroelectronics
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	1000
Subcategory:	Transistors

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Datasheet

SCT020H120G3AG Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Italy
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.