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Mfr.	Mfr. No:	Qty	Ext Total

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SCT027TO65G3

STMicroelectronics

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See Product Specifications

Mouser No:

511-SCT027TO65G3

Mfr. No:

SCT027TO65G3

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT027TO65G3 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,424.72	₹1,424.72
	₹1,128.41	₹11,284.10
	₹970.00	₹97,000.00
	₹896.39	₹4,48,195.00
	₹859.12	₹8,59,120.00
Full Reel (Order in multiples of 1800)
	₹857.26	₹15,43,068.00
3,600	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Brand:	STMicroelectronics
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	1800
Subcategory:	Transistors

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Datasheet

SCT027TO65G3 Datasheet (PDF)

PCN

Product Change Notification 2025-11-26 (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

STMICROELECTRONICS

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Silicon carbide (SiC) MOSFETs with 650V, 18mΩ typical, and 119A in an HiP247 and HiP247-4 packages.

Automotive-Grade Silicon Carbide Power MOSFETs

Developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology.

650V 3rd Gen SiC MOSFETs

Features low R_DS(on) per area, even at high temperatures, and excellent switching performance.

Silicon Carbide Power MOSFETs

Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.

HB/HB2 Series Insulated-Gate Bipolar Transistors

Combine a very low saturation voltage with a minimal collector current turn-off tail.