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SCTL90N65G2V

Name: STMicroelectronics SCTL90N65G2V
Brand: STMicroelectronics
SKU: 511-SCTL90N65G2V
Price: 2907.22 INR
Availability: InStock

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Mouser No:

511-SCTL90N65G2V

Mfr. No:

SCTL90N65G2V

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

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Datasheet:

SCTL90N65G2V Datasheet (PDF)

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In Stock: 1,597

Stock:: 1,597 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1597 will be subject to minimum order requirements.

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹2,907.22	₹2,907.22
	₹2,126.37	₹21,263.70
	₹2,076.98	₹2,07,698.00
	₹2,075.12	₹10,37,560.00
	₹1,940.94	₹19,40,940.00
Full Reel (Order in multiples of 3000)
	₹1,940.94	₹58,22,820.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	157 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	935 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	16 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	38 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	180 mg

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Datasheet

SCTL90N65G2V Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.