SCTWA10N120

STMicroelectronics
511-SCTWA10N120
SCTWA10N120

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm
Complete Your Design

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 10

Stock:
10 Can Dispatch Immediately
Quantities greater than 10 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹920.62 ₹920.62
₹693.26 ₹6,932.60

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-3
N-Channel
1 Channel
1.2 kV
12 A
690 mOhms
- 10 V, + 25 V
3.5 V
21 nC
- 55 C
+ 200 C
110 W
Enhancement
Brand: STMicroelectronics
Packaging: Tube
Product Type: SiC MOSFETS
Series: SCTWA10N120
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Unit Weight: 4.430 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

EOL

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.