SGT105R70ILB

STMicroelectronics
511-SGT105R70ILB
SGT105R70ILB

Mfr.:

Description:
GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 693

Stock:
693 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹610.33 ₹610.33
₹474.29 ₹4,742.90
₹358.74 ₹35,874.00
₹346.63 ₹1,73,315.00
₹259.97 ₹2,59,970.00
Full Reel (Order in multiples of 3000)
₹219.90 ₹6,59,700.00
6,000 Quote
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
PowerFLAT-8
700 V
21.7 A
105 mOhms
- 6 V, + 7 V
2.5 V
4.8 nC
- 55 C
+ 150 C
158 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: FET
Product Type: GaN FETs
Rise Time: 9 ns
Series: SGT
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Type: PowerGaN Transistor
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Attributes selected: 0

Datasheet

PCN

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Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

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