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SGT140R70ILB

Name: STMicroelectronics SGT140R70ILB
Brand: STMicroelectronics
SKU: 511-SGT140R70ILB
Price: 462.17 INR
Availability: OutOfStock

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Mouser No:

511-SGT140R70ILB

Mfr. No:

SGT140R70ILB

Mfr.:

STMicroelectronics

Description:

GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SGT140R70ILB Datasheet (PDF)

ECAD Model:

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More Information

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Availability

Stock:: 0

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On Order:: 1,000

Expected 12-06-2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹462.17	₹462.17
	₹323.33	₹3,233.30
	₹242.27	₹24,227.00
	₹215.25	₹1,07,625.00
	₹211.52	₹2,11,520.00
Full Reel (Order in multiples of 3000)
	₹178.91	₹5,36,730.00
24,000	Quote

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-8
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	3.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	113 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	4 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	FET
Product Type:	GaN FETs
Rise Time:	5 ns
Series:	SGT
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Type:	PowerGaN Transistor
Typical Turn-Off Delay Time:	3 ns
Typical Turn-On Delay Time:	4 ns

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Datasheet

SGT140R70ILB Datasheet (PDF)

PCN

Product Change Notification 2025-11-26 (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.