It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STD11N65M2

Name: STMicroelectronics STD11N65M2
Brand: STMicroelectronics
SKU: 511-STD11N65M2
Price: 218.97 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STD11N65M2

Mfr. No:

STD11N65M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package

Complete Your Design

Datasheet:

STD11N65M2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STD11N65M2

In Stock: 1,294

Stock:: 1,294 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹218.97	₹218.97
	₹140.70	₹1,407.00
	₹99.70	₹9,970.00
	₹80.13	₹40,065.00
	₹71.84	₹71,840.00
Full Reel (Order in multiples of 2500)
	₹66.16	₹1,65,400.00
	₹64.39	₹3,21,950.00
	₹63.74	₹6,37,400.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	670 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	12.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	85 W
Channel Mode:	Enhancement
Tradename:	MDmesh II Plus
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	15 ns
Product Type:	MOSFETs
Rise Time:	7.5 ns
Series:	STD11N65M2
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

If the end customer requires additional support please
process the request through your local Mouser
sales representative.

5-1013-36

Filter Document:

Datasheet

STD11N65M2 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.