STD4N80K5

STMicroelectronics
511-STD4N80K5
STD4N80K5

Mfr.:

Description:
MOSFETs N-CH 800V 2.1Ohm 3A Zener-protected
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Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
18 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹205.00 ₹205.00
₹131.38 ₹1,313.80
₹88.71 ₹8,871.00
₹70.63 ₹35,315.00
₹64.76 ₹64,760.00
Full Reel (Order in multiples of 2500)
₹58.33 ₹1,45,825.00
₹52.46 ₹2,62,300.00
₹50.88 ₹5,08,800.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
800 V
3 A
2.1 Ohms
- 30 V, 30 V
4 V
10.5 nC
- 55 C
+ 150 C
60 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 21 ns
Product Type: MOSFETs
Rise Time: 15 ns
Series: STD4N80K5
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 36 ns
Typical Turn-On Delay Time: 16.5 ns
Unit Weight: 330 mg
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

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