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STDRIVEG212QTR

Name: STMicroelectronics STDRIVEG212QTR
Brand: STMicroelectronics
SKU: 511-STDRIVEG212QTR
Price: 346.78 INR
Availability: InStock

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Mouser No:

511-STDRIVEG212QTR

Mfr. No:

STDRIVEG212QTR

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STDRIVEG212QTR Datasheet (PDF)

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Learn more about STMicroelectronics STDRIVEG212QTR

In Stock: 613

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹346.78	₹346.78
	₹229.99	₹2,299.90
	₹209.33	₹5,233.25
	₹177.88	₹17,788.00
	₹168.90	₹42,225.00
	₹151.83	₹75,915.00
	₹141.95	₹1,41,950.00
Full Reel (Order in multiples of 3000)
	₹119.49	₹3,58,470.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
Product:	Gate Driver
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-18
Number of Drivers:	2 Driver
Number of Outputs:	3 Output
Output Current:	1.8 A
Supply Voltage - Min:	10.3 V
Supply Voltage - Max:	18 V
Configuration:	Inverting, Non-Inverting
Rise Time:	22 ns
Fall Time:	13 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Development Kit:	EVLSTDRIVEG212
Maximum Turn-Off Delay Time:	65 ns
Maximum Turn-On Delay Time:	65 ns
Moisture Sensitive:	Yes
Operating Supply Current:	900 uA
Output Voltage:	220 V
Product Type:	Gate Drivers
Propagation Delay - Max:	65 ns
Rds On - Drain-Source Resistance:	4.8 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	STDRIVE

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Datasheet

STDRIVEG212QTR Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.