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STF11N60M2-EP

Name: STMicroelectronics STF11N60M2-EP
Brand: STMicroelectronics
SKU: 511-STF11N60M2-EP
Price: 198.55 INR
Availability: InStock

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Mouser No:

511-STF11N60M2-EP

Mfr. No:

STF11N60M2-EP

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP p

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Datasheet:

STF11N60M2-EP Datasheet (PDF)

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In Stock: 864

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹198.55	₹198.55
	₹127.57	₹1,275.70
	₹86.34	₹8,634.00
	₹68.82	₹34,410.00
	₹62.89	₹62,890.00
	₹58.76	₹1,17,520.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	7.5 A
Rds On - Drain-Source Resistance:	550 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	12.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	5.5 ns
Series:	STF11N60M2-EP
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	2 g

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Datasheet

STF11N60M2-EP Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.