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STF28N60DM2

Name: STMicroelectronics STF28N60DM2
Brand: STMicroelectronics
SKU: 511-STF28N60DM2
Price: 367.13 INR
Availability: InStock

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Mouser No:

511-STF28N60DM2

Mfr. No:

STF28N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP packa

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Datasheet:

STF28N60DM2 Datasheet (PDF)

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In Stock: 454

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹367.13	₹367.13
	₹187.29	₹1,872.90
	₹169.59	₹16,959.00
	₹141.63	₹70,815.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9.3 ns
Product Type:	MOSFETs
Rise Time:	7.3 ns
Series:	STF28N60DM2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	53 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	2 g

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Datasheet

STF28N60DM2 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

N-Channel FDmesh Power MOSFETs

STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.