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STGF5H60DF

Name: STMicroelectronics STGF5H60DF
Brand: STMicroelectronics
SKU: 511-STGF5H60DF
Price: 164 INR
Availability: InStock

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Mouser No:

511-STGF5H60DF

Mfr. No:

STGF5H60DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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Datasheet:

STGF5H60DF Datasheet (PDF)

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In Stock: 2,258

Stock:: 2,258 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹164.00	₹164.00
	₹83.77	₹837.70
	₹68.95	₹6,895.00
	₹54.51	₹27,255.00
	₹42.68	₹42,680.00
	₹41.65	₹83,300.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220FP-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	10 A
Pd - Power Dissipation:	24 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGF5H60DF
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	10 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2.300 g

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Datasheet

STGF5H60DF Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.