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STGW50H65DFB2-4

Name: STMicroelectronics STGW50H65DFB2-4
Brand: STMicroelectronics
SKU: 511-STGW50H65DFB2-4
Price: 493.85 INR
Availability: InStock

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Mouser No:

511-STGW50H65DFB2-4

Mfr. No:

STGW50H65DFB2-4

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac

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Datasheet:

STGW50H65DFB2-4 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGW50H65DFB2-4

In Stock: 564

Stock:: 564 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 564 will be subject to minimum order requirements.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹493.85	₹493.85
	₹278.61	₹2,786.10
	₹217.11	₹21,711.00
	₹210.59	₹1,26,354.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	86 A
Pd - Power Dissipation:	272 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	4.430 g

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Datasheet

STGW50H65DFB2-4 Datasheet (PDF)

PCN

Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.